SI7850DP Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 60-V (D-S) Fast Switching MOSFET

New Product
Si7850DP
Vishay Siliconix
N-Channel 60-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
60
r_DS(on) (W)
0.022 @ V_GS = 10 V
0.031 @ V_GS = 4.5 V
I_D (A)
10.3
8.7
PowerPAKt SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFET
D New Low Thermal Resistance PowerPAKt
Package with Low 1.07-mm Profile
D PWM Optimized for Fast Switching
APPLICATIONS
D Primary Side Switch for 24-V DC/DC Applications
D Secondary Synchronous Rectifier
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Continuous Source Current
Pulsed Drain Current
Avalanche Current^b
Single Avalanche Energy^b
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_S
I_DM
I_AS
E_AS
P_D
T_J, T_stg
60
"20
10.3
6.2
7.5
4.5
3.7
1.5
40
15
11
4.5
1.8
2.3
0.9
–55 to 150
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Guaranteed by design, not subject to production testing.
t v 10 sec
Steady State
Steady State
Document Number: 71625
S-03828—Rev. A, 28-May-01
Symbol
R_thJA
R_thJC
Typical
22
58
2.6
Maximum
28
70
3.3
Unit
_C/W
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