SI7540ADP Datasheet, PDF (3/18 Pages) Vishay Siliconix – N-and P-Channel 20 V (D-S) MOSFET

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Si7540ADP
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
Dynamic ^a
Turn-on delay time
Rise time
t_d(on)
t_r
N-channel
V_DD = 10 V, R_L = 2 
I_D  5 A, V_GEN = 4.5 V, R_g = 1 
N-Ch
P-Ch
N-Ch
P-Ch
Turn-off delay time
Fall time
t_d(off)
t_f
P-channel
V_DD = -10 V, R_L = 2 
I_D  -5 A, V_GEN = -4.5 V, R_g = 1 
N-Ch
P-Ch
N-Ch
P-Ch
Turn-on delay time
Rise time
t_d(on)
t_r
N-channel
V_DD = 10 V, R_L = 2 
I_D  5 A, V_GEN = 10 V, R_g = 1 
N-Ch
P-Ch
N-Ch
P-Ch
Turn-off delay time
Fall time
t_d(off)
t_f
P-channel
V_DD = -10 V, R_L = 2 
I_D  -5 A, V_GEN = -10 V, R_g = 1 
N-Ch
P-Ch
N-Ch
P-Ch
Drain-Source Body Diode Characteristics
Continuous source-drain diode current
I_S
T_A = 25 °C
N-Ch
P-Ch
Pulse diode forward current (t = 100 μs)
I_SM
N-Ch
P-Ch
Body diode voltage
V_SD
Body diode reverse recovery time
t_rr
I_S = 2.9 A, V_GS = 0 V
I_S = -2.9 A, V_GS = 0 V
N-Ch
P-Ch
N-Ch
P-Ch
Body diode reverse recovery charge
Q_rr
N-channel
N-Ch
I_F = 5 A, dI//dt = 100 A/μs, T_J = 25 °C _P-Ch
Reverse recovery fall time
P-channel
N-Ch
t_a
I_F = -5 A, dI/dt = -100 A/μs, T_J = 25 °C _P-Ch
Reverse recovery rise time
t_b
N-Ch
P-Ch
Notes
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width  300 μs, duty cycle 2 %.
MIN.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP.
12
15
45
50
22
30
12
11
6
10
21
23
20
26
10
10
-
-
-
-
0.8
-0.81
20
30
10
20
8.5
18
11.5
12
MAX
25
30
90
100
45
60
25
20
15
15
40
45
40
50
20
20
2.9
-2.9
35
-25
1.2
-1.2
40
60
20
40
-
-
-
-
UNIT
ns
A
V
ns
nC
ns
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
S16-2274-Rev. C, 14-Nov-16
3
Document Number: 62951
For technical questions, contact: [e-mail]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000