SI7446BDP Datasheet, PDF (3/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.015
0.012
4000
C_iss
3200
Si7446BDP
Vishay Siliconix
0.009
0.006
V_GS = 4.5 V
V_GS = 10 V
2400
1600
C_oss
0.003
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
6
5
V_DS = 15 V
I_D = 19 A
4
3
2
1
0
0
6
12
18
24
30
Q_g - Total Gate Charge (nC)
Gate Charge
60
800
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Capacitance
1.6
V_GS = 10 V
I_D = 19 A
1.4
1.2
1.0
0.8
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.020
T_J = 150 °C
10
T_J = 25 °C
0.016
0.012
0.008
0.004
I_D = 19 A
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.000
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72554
S09-1819-Rev. E, 14-Sep-09
www.vishay.com
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