SI7446BDP Datasheet, PDF (2/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7446BDP
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
R_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 µA
V_DS = 0 V, V_GS = ±20 V
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 55°C
V_DS ≥ 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 19 A
V_GS = 4.5 V, I_D = 17 A
V_DS = 15 V, I_D = 19 A
I_S = 4.0 A, V_GS = 0 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery
Time
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 15 V, V_GS = 0 V, f = 1 MHz
V_DS = 15 V, V_GS = 5.0 V, I_D = 19 A
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
I_F = 2.3 A, dI/dt = 100 A/µs
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Min.
Typ.
Max.
Unit
1.0
3.0
V
± 100
nA
1
µA
5
40
A
0.0064 0.0075
Ω
0.0084 0.010
60
S
0.75
1.2
V
3076
657
pF
248
22
33
8.3
nC
4.7
0.4
0.8
1.2
Ω
20
30
16
25
120
180
ns
43
65
40
80
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50
V_GS = 10 V thru 4 V
40
30
20
3V
10
2V
0
0
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
60
50
40
30
20
T_C = 125 °C
10
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 72554
S09-1819-Rev. E, 14-Sep-09