SI7446BDP Datasheet, PDF (1/6 Pages) Vishay Siliconix – N-Channel 30-V (D-S) Fast Switching MOSFET

Si7446BDP
Vishay Siliconix
N-Channel 30-V (D-S) Fast Switching MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
0.0075 at V_GS = 10 V
30
0.010 at V_GS = 4.5 V
I_D (A)
19
17
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
PowerPAK^® SO-8
6.15 mm
D
8
D
7
D
6
D
5
S
1
S
5.15 mm
2
S
3
G
4
Bottom View
Ordering Information: Si7446BDP-T1-E3 (Lead (Pb)-free)
Si7446BDP-T1-GE3 (Lead-(Pb)-free and Halogen-free)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150°C)^a
Pulsed Drain Current
T_A = 25°C
T_A = 70°C
I_D
19
12
15
9
A
I_DM
50
Continuous Source Current (Diode Conduction)^a
I_S
4.0
1.6
Maximum Power Dissipation^a
T_A = 25°C
T_A = 70°C
P_D
4.8
1.9
3.0
1.2
W
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_J, T_stg
- 55 to 150
°C
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
t ≤ 10 s
Steady State
R_thJA
21
55
26
65
°C/W
Maximum Junction-to-Case (Drain)
Steady State
R_thJC
1.6
2.0
Notes
a. Surface Mounted on 1" x 1" FR4 board.
b. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72554
S09-1819-Rev. E, 14-Sep-09
www.vishay.com
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