SI7431DP-T1-GE3 Datasheet, PDF (3/8 Pages) Vishay Siliconix – P-Channel 200 V (D-S) MOSFET

Si7431DP
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
0.30
6000
0.25
0.20
0.15
V_GS = 6 V
V_GS = 10 V
5000
C_iss
4000
3000
0.10
0.05
0.00
0
10
20
30
40
50
I_D - Drain Current (A)
On-Resistance vs. Drain Current
10
V_DS = 10 V
8
I_D = 3.8 A
6
4
2
2000
1000
C_rss
C_oss
0
0
30
60
90
120
150
V_DS - Drain-to-Source Voltage (V)
Capacitance
2.2
1.9
V_GS = 10 V
I_D = 3.8 A
1.6
1.3
1.0
0.7
0
0
15
30
45
60
75
90
Q_g - Total Gate Charge (nC)
Gate Charge
40
0.4
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.30
10
T_J = 150 °C
1
T_J = 25 °C
0.25
0.20
I_D = 3.8 A
0.15
0.10
0.05
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_DS - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 73116
S10-2246-Rev. E, 04-Oct-10
www.vishay.com
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