SI7431DP-T1-GE3 Datasheet, PDF (2/8 Pages) Vishay Siliconix – P-Channel 200 V (D-S) MOSFET

Si7431DP
Vishay Siliconix
SPECIFICATIONS (T_J = 25 °C, unless otherwise noted)
Parameter
Symbol
Test Condition
Min.
Typ.
Max.
Unit
Static
Gate Threshold Voltage
Gate-Body Leakage
V_GS(th)
I_GSS
V_DS = V_GS, I_D = - 250 µA
V_DS = 0 V, V_GS = ± 20 V
- 2.0
- 4.0
V
± 100
nA
Zero Gate Voltage Drain Current
On-State Drain Current^a
I_DSS
V_DS = - 200 V, V_GS = 0 V
V_DS = - 200 V, V_GS = 0 V, T_J = 70 °C
I_D(on)
V_DS - 10 V, V_GS = - 10 V
- 20
-1
µA
- 10
A
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
R_DS(on)
g_fs
V_SD
V_GS = - 10 V, I_D = - 3.8 A
V_GS = - 6 V, I_D = - 3.6 A
V_DS = - 15 V, I_D = - 3.8 A
I_S = - 4.2 A, V_GS = 0 V
0.145 0.174

0.147 0.180
17
S
- 0.78
- 1.2
V
Total Gate Charge
Q_g
88
135
Gate-Source Charge
Q_gs
V_DS = - 75 V, V_GS = - 10 V, I_D = - 5.2 A
16.5
nC
Gate-Drain Charge
Q_gd
25
Gate Resistance
R_g
1.5
3
4.5

Turn-On Delay Time
t_d(on)
23
40
Rise Time
Turn-Off Delay Time
t_r
t_d(off)
V_DD = - 75 V, R_L = 15.5 
I_D  - 4.8 A, V_GEN = - 10 V, R_g = 6 
49
75
110
180
ns
Fall Time
t_f
66
100
Source-Drain Reverse Recovery Time
t_rr
I_F = - 2.9 A, dI/dt = 100 A/µs
75
120
Notes:
a. Pulse test; pulse width  300 µs, duty cycle  2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
40
V_GS = 10 V thru 5 V
35
30
25
20
15
10
5
4V
0
0
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
50
40
30
20
T_C = 125 °C
10
25 °C
- 55 °C
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
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Document Number: 73116
S10-2246-Rev. E, 04-Oct-10