SI7403DN Datasheet, PDF (3/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
Si7403DN
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
1400
Capacitance
0.24
0.18
0.12
V_GS = 2.5 V
0.06
V_GS = 4.5 V
0.00
0
4
8
12
16
20
I_D – Drain Current (A)
1200
1000
800
600
C_iss
400
200
0
0
C_rss
4
C_oss
8
12
16
20
V_DS – Drain-to-Source Voltage (V)
5
V_DS = 10 V
I_D = 3.3 A
4
Gate Charge
3
2
1
On-Resistance vs. Junction Temperature
1.8
1.6
V_GS = 4.5 V
I_D = 3.3 A
1.4
1.2
1.0
0.8
0
0
2
4
6
8
10
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.30
10
T_J = 150_C
T_J = 25_C
0.24
0.18
I_D = 3.3 A
0.12
0.06
1
0
0.25 0.50 0.75 1.00 1.25 1.50
V_SD – Source-to-Drain Voltage (V)
0.00
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
Document Number: 71431
S-03390—Rev. A, 02-Apr-01
www.vishay.com
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