SI7403DN Datasheet, PDF (1/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

New Product
P-Channel 20-V (D-S) MOSFET
Si7403DN
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.1 @ V_GS = –4.5 V
–20
0.135 @ V_GS = –2.5 V
I_D (A)
–4.5
–3.8
PowerPAKt 1212-8
3.30 mm
D
8
D
7
D
6
D
5
S
1
S
3.30 mm
2
S
3
G
4
Bottom View
FEATURES
D TrenchFETr Power MOSFETS: 2.5-V Rated
D New PowerPAKt Package
– Low Thermal Resistance, R_thJC
– Low 1.07-mm Profile
APPLICATIONS
D Load Switching
D PA Switching
S
SS
G
P-Channel MOSFET
DD DD
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
–20
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
–4.5
–2.9
–3.2
–2.1
–20
–3.0
–1.3
3.5
1.5
1.9
0.8
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71431
S-03390—Rev. A, 02-Apr-01
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJC
Typical
28
65
4.5
Maximum
35
81
5.6
Unit
_C/W
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