SI7403DN Datasheet, PDF (2/4 Pages) Vishay Siliconix – P-Channel 20-V (D-S) MOSFET

Si7403DN
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = –20 V, V_GS = 0 V
V_DS = –20 V, V_GS = 0 V, T_J = 70_C
V_DS = –5 V, V_GS = –4.5 V
V_DS = –5 V, V_GS = –2.5 V
V_GS = –4.5 V, I_D = –3.3 A
V_GS = –2.5 V, I_D = –2.9 A
V_DS = –10 V, I_D = –3.3 A
I_S = –1.6 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = –10 V, V_GS = –4.5 V, I_D = –4.5 A
V_DD = –10 V, R_L = 10 W
I_D ^ –1.6 A, V_GEN = –4.5 V, R_G = 6 W
I_F = –1.6 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
–0.45
V
"100
nA
–1
mA
–5
–10
A
–4
0.078
0.1
W
0.110
0.135
8.8
S
0.8
–1.2
V
8.6
14
1.5
nC
3.1
27
50
17
30
52
80
ns
45
70
50
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 4.5, 4, 3.5 V
16
3V
12
2.5 V
8
2V
4
1.5 V
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
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2
Transfer Characteristics
20
T_C = –55_C
16
125_C
12
25_C
8
4
0
0
1
2
3
4
V_GS – Gate-to-Source Voltage (V)
Document Number: 71431
S-03390—Rev. A, 02-Apr-01