SI6943BDQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

New Product
Si6943BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
1000
Capacitance
0.12
0.09
0.06
V_GS = 2.5 V
V_GS = 4.5 V
0.03
0.00
0
3
6
9
12
15
I_D - Drain Current (A)
5
V_DS = 6 V
I_D = 2.5 A
4
Gate Charge
800
600
C_iss
400
C_oss
200
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 2.5 A
1.4
3
1.2
2
1.0
1
0.8
0
0.0
1.3
2.6
3.9
5.2
6.5
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
10
T_J = 150_C
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.16
0.12
I_D = 2.5 A
T_J = 25_C
0.08
0.04
1
0.0
0.3
0.6
0.9
1.2
1.5
V_SD - Source-to-Drain Voltage (V)
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
0.00
0
1
2
3
4
5
6
7
8
V_GS - Gate-to-Source Voltage (V)
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