SI6943BDQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

New Product
Si6943BDQ
Vishay Siliconix
Dual P-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.08 @ V_GS = -4.5 V
-12
0.105 @ V_GS = -2.5 V
I_D (A)
-2.5
- 1.9
S₁
S₂
TSSOP-8
D₁ 1 _D
S_{1 2}
S_{1 3}
Si6943BDQ
G_{1 4}
Top View
8 D2
7 ^S2
6 ^S2
5 ^G2
G₁
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
-12
"8
- 2.5
-2.3
-2.2
-1.8
-20
-1.0
-0.7
1.10
0.80
0.70
0.50
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 10 sec
Steady State
Steady State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 72016
S-21780—Rev. A, 07-Oct-02
Symbol
R_thJA
R_thJF
Typical
89
120
70
Maximum
110
150
90
Unit
_C/W
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