SI6943BDQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 2.5-V (G-S) MOSFET

Si6943BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = -250 mA
V_DS = 0 V, V_GS = "8 V
V_DS = -9.6 V, V_GS = 0 V
V_DS = -9.6 V, V_GS = 0 V, T_J = 70_C
V_DS -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -2.5 A
V_GS = -2.5 V, I_D = -1.9 A
V_DS = -15 V, I_D = -2.5 A
I_S = -1.0 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = -6 V, V_GS = -4.5 V, I_D = -2.5 A
V_DD = -6 V, R_L = 6 W
I_D ^ -1.0 A, V_GEN = -4.5 V, R_G = 6 W
I_F = -1.0 A, di/dt = 100 A/ms
Min Typ Max Unit
-0.45
-0.8
V
"100
nA
-1
mA
-5
-10
A
0.06
0.08
W
0.08
0.105
8
S
-0.75
-1.2
V
5.7
10
0.8
nC
1.6
15
25
35
60
35
60
ns
30
50
30
60
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
20
V_GS = 5 thru 3.5 V
16
12
Output Characteristics
3V
2.5 V
8
2V
4
0
0
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2
1.5 V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
20
T_C = -55_C
16
25_C
125_C
12
8
4
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 72016
S-21780—Rev. A, 07-Oct-02