SI6880EDQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) Battery Switch, ESD Protection

New Product
Si6880EDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.04
0.03
0.02
0.01
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
Gate Charge
5
V_DS = 10 V
4
I_D = 7.5 A
3
2
1
0.00
0
6
12
18
24
30
I_D – Drain Current (A)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 7.5 A
1.2
0
0
30
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
T_J = 150_C
10
1.0
T_J = 25_C
0.8
0.6
–50
0
50
100
150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.060
1
0
0.4
0.2
0.4 0.6 0.8
1.0 1.2
V_SD – Source-to-Drain Voltage (V)
Threshold Voltage
0.048
0.036
I_D = 7.5 A
0.2
I_D = 250 mA
–0.0
0.024
–0.2
0.012
–0.4
0.000
0
2
4
6
8
V_GS – Gate-to-Source Voltage (V)
–0.6
–50 –25
0 25 50 75 100 125 150
T_J – Temperature (_C)
Document Number: 71690
S-05238—Rev. B, 17-Dec-01
www.vishay.com
3