SI6880EDQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) Battery Switch, ESD Protection

New Product
Si6880EDQ
Vishay Siliconix
N-Channel 1.8-V (G-S) Battery Switch, ESD Protection
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.018 @ V_GS = 4.5 V
20
0.022 @ V_GS = 2.5 V
0.026 @ V_GS = 1.8 V
I_D (A)
7.5
6.5
6.0
FEATURES
D TrenchFETr Power MOSFET
D ESD Protected: 4000 V
D Common Drain
APPLICATIONS
D 1-2 Cell Battery Protection Circuitry
D
D
TSSOP-8
D 1_D
8D
S_{1 2}
Si6880EDQ
7 ^S2
G₁
S_{1 3}
6 ^S2
G₁ 4
5 G2
Top View
*1.5 kW
S₁
N-Channel
*Typical value by design
*1.5 kW
G₂
S₂
N-Channel
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
T20
"12
7.5
6
6
5
30
1.6
1.08
1.78
1.19
1.14
0.76
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)^a
t v 10 sec.
Steady State
Steady State
Notes
a. Surface Mounted on FR4 Board.
b. t v 10 sec.
Document Number: 71690
S-05238—Rev. B, 17-Dec-01
Symbol
R_thJA
R_thJF
Typical
55
85
35
Maximum
70
105
45
Unit
_C/W
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