SI6880EDQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 1.8-V (G-S) Battery Switch, ESD Protection

Si6880EDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J =25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Conditions
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "4.5 V
V_DS = 0 V, V_GS = "12 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 70_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 7.5 A
V_GS = 2.5 V, I_D = 6.5 A
V_GS = 1.8 V, I_D = 6.0 A
V_DS = 10 V, I_D = 7.5 A
I_S = 1.6 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 7.5 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
Min Typ Max Unit
0.45
V
"250
nA
"10
mA
1
mA
25
20
A
0.015
0.018
0.017
0.022
W
0.020
0.026
39
S
0.65
1.1
V
27
40
3.0
nC
5.5
1.5
2.3
800
1200
ms
6
10
5.5
10
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
V_GS = 5 thru 2 V
24
1.5 V
18
12
6
0
0
1
2
3
4
5
V_DS – Drain-to-Source Voltage (V)
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2
30
24
18
12
6
0
0.0
Transfer Characteristics
T_C = 125_C
25_C
–55_C
0.5
1.0
1.5
2.0
V_GS – Gate-to-Source Voltage (V)
Document Number: 71690
S-05238—Rev. B, 17-Dec-01