SI6459BDQ Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
Si6459BDQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.30
1000
Capacitance
0.25
0.20
0.15
0.10
V_GS = 4.5 V
V_GS = 10 V
0.05
0.00
0
4
8
12
16
20
I_D − Drain Current (A)
Gate Charge
10
V_DS = 30 V
I_D = 2.7 A
8
6
4
2
800
C_iss
600
400
200
C_oss
0
C_rss
0
10
20
30
40
50
60
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 2.7 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.30
0.25
0.20
I_D = 2.7 A
0.15
0.10
T_J = 25_C
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD − Source-to-Drain Voltage (V)
0.05
0.00
0
2
4
6
8
10
V_GS − Gate-to-Source Voltage (V)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
www.vishay.com
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