SI6459BDQ Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

Si6459BDQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = −60 V, V_GS = 0 V
V_DS = −60 V, V_GS = 0 V, T_J = 70_C
V_DS = −5 V, V_GS = −10 V
V_GS = −10 V, I_D = −2.7 A
V_GS = −4.5 V, I_D = −2.4 A
V_DS = −15 V, I_D = −2.7 A
I_S = −1.25 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −30 V, V_GS = −10 V, I_D = −2.7 A
V_DD = −30 V, R_L = 30 W
I_D ^ −1 A, V_GEN = −10 V, R_G = 6 W
I_F = −1.25 A, di/dt = 100 A/ms
Min Typ Max Unit
−1
−3
V
"100
nA
−1
mA
−10
−20
A
0.092
0.115
W
0.120
0.150
8
S
−0.8
−1.2
V
14.5
22
2.2
nC
3.7
14
W
10
15
15
22
50
75
ns
35
55
30
50
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
20
V_GS = 10 thru 5 V
16
16
12
4V
12
8
8
4
4
3V
0
0
0
1
2
3
4
5
0
V_DS − Drain-to-Source Voltage (V)
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2
Transfer Characteristics
T_C = 125_C
25_C
−55_C
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72518
S-32220—Rev. A, 03-Nov-03