SI6459BDQ Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 60-V (D-S) MOSFET

New Product
P-Channel 60-V (D-S) MOSFET
Si6459BDQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.115 @ V_GS = −10 V
−60
0.150 @ V_GS = −4.5 V
I_D (A)
−2.7
−2.4
FEATURES
D TrenchFETr Power MOSFET
S*
TSSOP-8
D 1_D
S2
S3
G4
Top View
8D
7S
6S
5D
Ordering Information: Si6459BDQ-T1
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Avalanche Current
Single Pulse Avalanche Energy
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
I_AS
E_AS
P_D
T_J, T_stg
−2.7
−2.2
−1.25
1.50
1.0
−60
"20
−20
15
11
−55 to 150
−2.2
−1.8
−0.83
1.0
0.67
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 72518
S-32220—Rev. A, 03-Nov-03
Symbol
R_thJA
R_thJF
Typical
66
100
50
Maximum
83
120
60
Unit
_C/W
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