SI6435ADQ Datasheet, PDF (3/3 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
Si6435ADQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.15
2500
0.12
2000
Capacitance
C_iss
0.09
1500
0.06
0.03
V_GS = 4.5 V
V_GS = 10 V
0
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 5.5 A
8
1000
C_oss
500
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 10 V
I_D = 5.5 A
1.4
6
1.2
4
1.0
2
0.8
0
0
6
12
18
24
30
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.20
0.15
I_D = 5.5 A
0.10
T_J = 25_C
0.05
1
0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71104
S-99421—Rev. A, 29-Nov-99
0
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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