SI6435ADQ Datasheet, PDF (1/3 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

New Product
P-Channel 30-V (D-S) MOSFET
Si6435ADQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.030 @ V_GS = –10 V
–30
0.055 @ V_GS = –4.5 V
I_D (A)
"5.5
"4.1
S*
TSSOP-8
D1_D
S2
Si6435ADQ
S3
G4
Top View
8D
7S
6S
5D
G
* Source Pins 2, 3, 6 and 7
must be tied common.
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
"5.5
"4.5
–1.35
1.5
1.0
–30
"20
"30
–55 to 150
"4.7
"3.7
–0.95
1.05
0.67
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71104
S-99421—Rev. A, 29-Nov-99
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
65
100
43
Maximum
83
120
52
Unit
_C/W
www.vishay.com S FaxBack 408-970-5600
2-1