SI6435ADQ Datasheet, PDF (2/3 Pages) Vishay Siliconix – P-Channel 30-V (D-S) MOSFET

Si6435ADQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = –250 mA
V_DS = 0 V, V_GS = "20 V
V_DS = –24 V, V_GS = 0 V
V_DS = –24 V, V_GS = 0 V, T_J = 70_C
V_DS –5 V, V_GS = –10 V
V_DS –5 V, V_GS = –4.5 V
V_GS = –10 V, I_D = –5.5 A
V_GS = –4.5 V, I_D = –4.1 A
V_DS = –15 V, I_D = –5.5 A
I_S = –1.3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = –15 V, V_GS = –5 V, I_D = –5.5 A
V_DD = –15 V, R_L = 15 W
I_D ^ –1 A, V_GEN = –10 V, R_G = 6 W
I_F = –1.3 A, di/dt = 100 A/ms
Min Typ Max Unit
–1.0
V
"100
nA
–1
mA
–10
–30
A
–7
0.024
0.030
W
0.042
0.055
12
S
–0.8
–1.1
V
15
20
5.7
nC
5.0
12
20
10
20
42
60
ns
17
25
40
80
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 5 V
24
24
18
4V
18
12
12
6
6
2V
3V
0
0
0
2
4
6
8
10
0
V_DS – Drain-to-Source Voltage (V)
www.vishay.com S FaxBack 408-970-5600
2-2
Transfer Characteristics
T_C = 125_C
25_C
–55_C
1
2
3
4
5
V_GS – Gate-to-Source Voltage (V)
Document Number: 71104
S-99421—Rev. A, 29-Nov-99