SI6404DQ Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
Si6404DQ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.015
On-Resistance vs. Drain Current
6000
Capacitance
0.012
V_GS = 2.5 V
0.009
0.006
0.003
V_GS = 4.5 V
V_GS = 10 V
0.000
0
6
12
18
24
30
I_D – Drain Current (A)
Gate Charge
10
V_DS = 15 V
I_D = 11 A
8
6
4
2
5000
4000
C_iss
3000
2000
1000
C_oss
C_rss
0
0
6
12
18
24
30
V_DS – Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.8
V_GS = 10 V
1.6
I_D = 11 A
1.4
1.2
1.0
0.8
0
0
15
30
45
60
75
Q_g – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
0.6
–50 –25 0
25 50 75 100 125 150
T_J – Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.05
T_J = 150_C
10
0.04
0.03
I_D = 11 A
T_J = 25_C
0.02
0.01
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD – Source-to-Drain Voltage (V)
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
0.00
0
2
4
6
8
10
V_GS – Gate-to-Source Voltage (V)
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