SI6404DQ Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

Si6404DQ
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 24 V, V_GS = 0 V
V_DS = 24 V, V_GS = 0 V, T_J = 70_C
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 11 A
V_GS = 4.5 V, I_D = 10 A
V_GS = 2.5 V, I_D = 8.8 A
V_DS = 10 V, I_D = 11 A
I_S = 1.5 A, V_GS = 0 V
Total Gate Charge
Q_g
Gate-Source Charge
Q_gs
Gate-Drain Charge
Q_gd
Gate Resistance
R_g
Turn-On Delay Time
t_d(on)
Rise Time
t_r
Turn-Off Delay Time
t_d(off)
Fall Time
t_f
Source-Drain Reverse Recovery Time
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 15 V, V_GS = 4.5 V, I_D = 11 A
V_DD = 15 V, R_L = 15 W
I_D ^ 1 A, V_GEN = 4.5 V, R_G = 6 W
I_F = 1.5 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6
V
"100
nA
1
mA
10
20
A
0.0073
0.009
W
0.0084
0.010
0.0116
0.014
W
27
S
0.72
1.1
V
32
48
8.1
nC
10
7.5
W
35
55
35
55
100
150
ns
50
75
40
85
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10 thru 3 V
24
24
Transfer Characteristics
18
2V
12
6
0
0
2
4
6
8
10
V_DS – Drain-to-Source Voltage (V)
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2
18
12
6
0
0.0
T_C = 125_C
25_C
–55_C
0.5
1.0
1.5
2.0
2.5
V_GS – Gate-to-Source Voltage (V)
Document Number: 71440
S-03483—Rev. A, 16-Apr-01