SI6404DQ Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 30-V (D-S) MOSFET

New Product
N-Channel 30-V (D-S) MOSFET
Si6404DQ
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.009 @ V_GS = 10 V
30
0.010 @ V_GS = 4.5 V
0.014 @ V_GS = 2.5 V
I_D (A)
11
10
8.8
FEATURES
D TrenchFETr Power MOSFETS: 2.5-V Rated
D 30-V V_DS
APPLICATIONS
D Battery Switch
D Charger Switch
D
TSSOP-8
D 1_D
S2
Si6404DQ
S3
G4
Top View
8D
7S
6S
5D
* Source Pins 2, 3, 6 and 7
must be tied common.
G
S*
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current (10 ms Pulse Width)
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"12
11
8.6
8.9
6.9
30
1.5
0.95
1.75
1.08
1.14
0.69
–55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71440
S-03483—Rev. A, 16-Apr-01
Symbol
R_thJA
R_thJF
Typical
55
95
35
Maximum
70
115
45
Unit
_C/W
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