SI5473DC Datasheet, PDF (3/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
Si5473DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
3000
Capacitance
0.08
0.06
0.04
V_GS = 1.8 V
V_GS = 2.5 V
0.02
V_GS = 4.5 V
0.00
0
5
10
15
20
I_D - Drain Current (A)
5
V_DS = 6 V
I_D = 5.9 A
4
Gate Charge
3
2
1
0
0
5
10
15
20
25
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
2500
C_iss
2000
1500
1000
C_oss
500
C_rss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
1.3
V_GS = 4.5 V
I_D = 5.9 A
1.2
1.1
1.0
0.9
0.8
0.7
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 5.9 A
T_J = 25_C
0.04
I_D = 2.2 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
0.00
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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3