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SI5473DC Datasheet, PDF (2/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET
Si5473DC
Vishay Siliconix
New Product
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source On-State Resistancea
Forward Transconductancea
Diode Forward Voltagea
Dynamicb
VGS(th)
IGSS
IDSS
ID(on)
rDS(on)
gfs
VSD
VDS = VGS, ID = - 250 mA
VDS = 0 V, VGS = "8 V
VDS = - 9.6 V, VGS = 0 V
VDS = - 9.6 V, VGS = 0 V, TJ = 85_C
VDS p - 5 V, VGS = - 4.5 V
VGS = - 4.5 V, ID = - 5.9 A
VGS = - 2.5 V, ID = - 5.3 A
VGS = - 1.8 V, ID = - 2.2 A
VDS = - 5 V, ID = - 5.9 A
IS = - 1.1 A, VGS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
trr
VDS = - 6 V, VGS = - 4.5 V, ID = - 5.9 A
VDD = - 6 V, RL = 6 W
ID ^ - 1 A, VGEN = - 4.5 V, RG = 6 W
IF = - 1.1 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
- 0.40
- 1.0
V
"100
nA
-1
mA
-5
- 20
A
0.022
0.027
0.028
0.0335
W
0.036
0.045
20
S
- 0.8
- 1.2
V
21
32
3.1
nC
6.0
25
40
50
75
145
220
ns
90
135
70
105
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
VGS = 5 thru 2 V
15
10
1.5 V
5
0
0
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2
1V
1
2
3
4
5
VDS - Drain-to-Source Voltage (V)
Transfer Characteristics
20
16
12
8
TC = - 55_C
4
25_C
- 55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
VGS - Gate-to-Source Voltage (V)
Document Number: 72261
S-31265—Rev. A, 16-Jun-03