SI5473DC Datasheet, PDF (1/5 Pages) Vishay Siliconix – P-Channel 12-V (D-S) MOSFET

New Product
P-Channel 12-V (D-S) MOSFET
Si5473DC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.027 @ V_GS = - 4.5 V
- 12
0.0335 @ V_GS = - 2.5 V
0.045 @ V_GS = - 1.8 V
1206-8 ChipFETr
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D
D
D
D
D
D
G
S
Bottom View
Ordering Information: Si5473DC-T1
I_D (A)
- 8.1
- 7.3
- 6.3
FEATURES
D TrenchFETr Power MOSFETS
D Low r_DS(on) and Excellent Power Handling In
Compact Footprint
APPLICATIONS
D Battery and Load Switch for Portable Devices
S
Marking Code
BI XXX
Lot Traceability
and Date Code
Part #
Code
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
V_DS
- 12
V_GS
"8
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
I_D
I_DM
I_S
P_D
T_J, T_stg
- 8.1
- 5.9
- 5.9
- 4.3
"20
- 2.1
- 1.1
2.5
1.3
1.3
0.7
- 55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t v 5 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
40
80
15
Maximum
50
95
20
Unit
_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singula-
tion process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder inter-
connection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 72261
S-31265—Rev. A, 16-Jun-03
www.vishay.com
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