SI5406DC Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

Si5406DC
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
1800
Capacitance
0.024
0.018
0.012
0.006
V_GS = 2.5 V
V_GS = 4.5 V
1500
1200
900
600
300
C_iss
C_rss
C_oss
0.000
0
4
8
12
16
20
I_D -- Drain Current (A)
5
V_DS = 6 V
I_D = 6.9 A
4
Gate Charge
3
2
1
0
0
3
6
9
12
V_DS -- Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 4.5 V
1.3
I_D = 6.9 A
1.2
1.1
1.0
0.9
0
0
4
8
12
16
Q_g -- Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
20
T_J = 150_C
10
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD -- Source-to-Drain Voltage (V)
0.8
--50 --25 0
25 50 75 100 125 150
T_J -- Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.035
0.030
0.025
I_D = 6.9 A
0.020
0.015
0.010
0.005
0.000
0
1
2
3
4
5
V_GS -- Gate-to-Source Voltage (V)
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
www.vishay.com
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