SI5406DC Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

Si5406DC
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 1.2 mA
V_DS = 0 V, V_GS = 8 V
V_DS = 9.6 V, V_GS = 0 V
V_DS = 9.6 V, V_GS = 0 V, T_J = 85_C
V_DS ≥ 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 6.9 A
V_GS = 2.5 V, I_D = 2 A
V_DS = 10 V, I_D = 6.9 A
I_S = 1.1 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width ≤ 300 ms, duty cycle ≤ 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 6 V, V_GS = 4.5 V, I_D = 6.9 A
V_DD = 6 V, R_L = 6 Ω
I_D ≅ 1 A, V_GEN = 4.5 V, R_G = 6 Ω
I_F = 1.1 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6
V
100
nA
1
5
mA
20
A
0.017
0.020
Ω
0.021
0.025
30
S
0.7
1.2
V
13.7
20
2.3
nC
4.1
17
25
46
70
54
80
ns
29
45
35
70
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
20
V_GS = 5 thru 2.5 V
2V
15
10
5
1V
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS -- Drain-to-Source Voltage (V)
Transfer Characteristics
20
16
12
8
T_C = 125_C
4
25_C
--55_C
0
0.0
0.5
1.0
1.5
2.0
2.5
V_GS -- Gate-to-Source Voltage (V)
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2-2
Document Number: 71657
S-21251—Rev. B, 05-Aug-02