SI5406DC Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 2.5-V (G-S) MOSFET

N-Channel 2.5-V (G-S) MOSFET
Si5406DC
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
12
r_DS(on) (Ω)
0.020 @ V_GS = 4.5 V
0.025 @ V_GS = 2.5 V
1206-8 ChipFETt
1
D
D
D
D
D
D
G
S
Bottom View
Ordering Information: Si5406DC-T1
I_D (A)
9.5
8.5
FEATURES
D TrenchFETr Power MOSFETS: 2.5-V Rated
D Low Thermal Resistance
APPLICATIONS
D Load/Power Switching for Cell Phones and
Pagers
D PA Switch in Cellular Devices
D Battery Operated Systems
D
Marking Code
AC XXX
Lot Traceability
and Date Code
Part # Code
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)^{b, c}
T_A = 25_C
T_A = 85_C
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
12
8
9.5
6.9
6.8
4.9
20
2.1
1.1
2.5
1.3
1.3
0.7
--55 to 150
260
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
t ≤ 5 sec
40
Steady State
R_thJA
80
Steady State
R_thJF
15
50
95
_C/W
20
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation
process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-
nection.
c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 71657
S-21251—Rev. B, 05-Aug-02
www.vishay.com
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