SI4953DY Datasheet, PDF (3/4 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode MOSFET

Si4953DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
30
30
V_GS = 10, 9, 8, 7, 6 V
24
5V
24
18
18
Transfer Characteristics
T_C = - 55_C
25_C
125_C
12
4V
6
2, 1 V
3V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Drain Current
0.20
0.16
12
6
0
0
2
4
6
8
V_GS - Gate-to-Source Voltage (V)
1500
Capacitance
1200
C_iss
0.12
V_GS = 4.5 V
0.08
0.04
V_GS = 10 V
0.00
0
6
12
18
24
30
I_D - Drain Current (A)
Gate Charge
10
V_DS = 15 V
8
I_D = 4.9 A
6
900
600
C_oss
300
C_rss
0
0
6
12
18
24
30
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.75
1.50
V_GS = 10 V
I_D = 4.9 A
1.25
4
1.00
2
0.75
0
0
4
8
12
16
20
Q_g - Total Gate Charge (nC)
Document Number: 70153
S-31726—Rev. E, 18-Aug-03
0.50
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
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