SI4953DY Datasheet, PDF (1/4 Pages) Fairchild Semiconductor – Dual P-Channel Enhancement Mode MOSFET

Si4953DY
Vishay Siliconix
Dual P-Channel 30-V(D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.053 @ V_GS = - 10 V
- 30
0.095 @ V_GS = - 4.5 V
I_D (A)
- 4.9
- 3.6
FEATURES
D 100% R_g Tested
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
Ordering Information: Si4953DY
Si4953DY-T1 (with Tape and Reel)
S₁
G₁
S₂
G₂
D₁ D₁
P-Channel MOSFET
D₂ D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
- 30
"20
- 4.9
- 3.9
- 30
- 1.7
2.0
1.3
- 55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
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Document Number: 70153
S-31726—Rev. E, 18-Aug-03
Symbol
R_thJA
Limit
62.5
Unit
_C/W
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