SI4933DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si4933DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.030
On-Resistance vs. Drain Current
6000
Capacitance
0.025
0.020
0.015
0.010
0.005
V_GS = 1.8 V
V_GS = 2.5 V
V_GS = 4.5 V
0.000
0
6
12
18
24
30
I_D - Drain Current (A)
5
V_DS = 6 V
I_D = 9.8 A
4
Gate Charge
5000
C_iss
4000
3000
2000
1000
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
I_D = 9.8 A
1.4
3
1.2
2
1.0
1
0.8
0
0
10
20
30
40
50
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
T_J = 150_C
10
T_J = 25_C
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD - Source-to-Drain Voltage (V)
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
0.6
-50 -25 0 25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.030
0.025
0.020
I_D = 3 A
0.015
I_D = 9.8 A
0.010
0.005
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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