SI4933DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si4933DY
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.014 @ V_GS = -4.5 V
-12
0.017 @ V_GS = -2.5 V
0.022 @ V_GS = -1.8 V
I_D (A)
-9.8
- 8.9
- 7.8
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switching
SO-8
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Top View
S₁
G₁
S₂
G₂
D₁
P-Channel MOSFET
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
-12
"8
- 9.8
-7.4
-7.8
-5.9
-30
-1.7
-0.9
2.0
1.1
1.3
0.7
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 ” x 1” FR4 Board.
Document Number: 71980
S-22122—Rev. B, 25-Nov-02
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
45
85
26
Maximum
62.5
110
35
Unit
_C/W
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