SI4933DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si4933DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = -500 mA
V_DS = 0 V, V_GS = "8 V
V_DS = -9.6 V, V_GS = 0 V
V_DS = -9.6 V, V_GS = 0 V, T_J = 55_C
V_DS = -5 V, V_GS = -4.5 V
V_GS = -4.5 V, I_D = -9.8 A
V_GS = -2.5 V, I_D = -8.9 A
V_GS = -1.8 V, I_D = -5.0 A
V_DS = -10 V, I_D = -9.8 A
I_S = -1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
t_rr
V_DS = 6 V, V_GS = -4.5 V, I_D = -9.8 A
V_DD = 6 V, R_L = 6 W
I_D ^ -1 A, V_GEN = -4.5 V, R_G = 6 W
I_F = -1.7 A, di/dt = 100 A/ms
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
Min
Typ
Max Unit
-0.40
-1.0
V
"100
nA
-1
mA
-5
-30
A
0.0115
0.014
0.014
0.017
W
0.018
0.022
40
S
-0.7
-1.2
V
46
70
6.0
nC
13
35
55
47
70
320
480
ns
260
390
210
315
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
V_GS = 5 thru 2 V
1.5 V
1V
1
2
3
4
5
V_DS - Drain-to-Source Voltage (V)
Transfer Characteristics
30
24
18
12
6
0
0.0
T_C = 125_C
25_C
-55 _C
0.4
0.8
1.2
1.6
2.0
V_GS - Gate-to-Source Voltage (V)
Document Number: 71980
S-22122—Rev. B, 25-Nov-02