SI4931DY Datasheet, PDF (3/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

New Product
Si4931DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.10
5000
Capacitance
0.08
0.06
4000
C_iss
3000
0.04
V_GS = 1.8 V
0.02
0.00
0
V_GS = 2.5 V
V_GS = 4.5 V
6
12
18
24
30
I_D − Drain Current (A)
5
V_DS = 6 V
I_D = 8.9 A
4
Gate Charge
3
2
1
2000
1000
C_rss
C_oss
0
0
2
4
6
8
10
12
V_DS − Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
1.4
V_GS = 4.5 V
I_D = 8.9 A
1.2
1.0
0.8
0
0
10
20
30
40
Q_g − Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
30
10
T_J = 150_C
T_J = 25_C
0.6
−50 −25 0
25 50 75 100 125 150
T_J − Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.10
0.08
0.06
I_D = 3.6 A
0.04
I_D = 8.9 A
0.02
1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
V_SD − Source-to-Drain Voltage (V)
Document Number: 72379
S-32411—Rev. B, 24-Nov-03
0.00
0
1
2
3
4
5
V_GS − Gate-to-Source Voltage (V)
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