SI4931DY Datasheet, PDF (2/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET

Si4931DY
Vishay Siliconix
New Product
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = −350 mA
V_DS = 0 V, V_GS = "8 V
V_DS = −12 V, V_GS = 0 V
V_DS = −12 V, V_GS = 0 V, T_J = 55_C
V_DS = −5 V, V_GS = −4.5 V
V_GS = −4.5 V, I_D = −8.9 A
V_GS = −2.5 V, I_D = −8.1 A
V_GS = −1.8 V, I_D = −3.6 A
V_DS = −6 V, I_D = −8.9 A
I_S = −1.7 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = −6 V, V_GS = −4.5 V, I_D = −8.9 A
V_DD = −6 V, R_L = 6 W
I_D ^ −1 A, V_GEN = −4.5 V, R_G = 6 W
I_F = −1.7 A, di/dt = 100 A/ms
Min
Typ
Max Unit
−0.4
−1.0
V
"100
nA
−1
mA
−5
−30
A
0.0145
0.018
0.018
0.022
W
0.023
0.028
26
S
−0.7
−1.2
V
34.5
52
5.1
nC
9.6
9
W
25
40
46
70
230
345
ns
155
235
128
200
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
30
24
18
12
6
0
0
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2
Output Characteristics
V_GS = 5 thru 2 V
1.5 V
1V
1
2
3
4
5
V_DS − Drain-to-Source Voltage (V)
Transfer Characteristics
30
24
18
12
6
0
0.0
T_C = 125_C
25_C
−55_C
0.5
1.0
1.5
2.0
2.5
V_GS − Gate-to-Source Voltage (V)
Document Number: 72379
S-32411—Rev. B, 24-Nov-03