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SI4931DY Datasheet, PDF (1/5 Pages) Vishay Siliconix – Dual P-Channel 12-V (D-S) MOSFET | |||
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New Product
Si4931DY
Vishay Siliconix
Dual P-Channel 12-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
rDS(on) (W)
0.018 @ VGS = â4.5 V
â12
0.022 @ VGS = â2.5 V
0.028 @ VGS = â1.8 V
ID (A)
â8.9
â8.1
â3.6
FEATURES
D TrenchFETr Power MOSFET
D Advanced High Cell Density Process
APPLICATIONS
D Load Switching
SO-8
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
Top View
Ordering Information: Si4931DYâE3
Si4931DY-T1âE3 (with Tape and Reel)
S1
G1
D1
P-Channel MOSFET
S2
G2
D2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs Steady State
Drain-Source Voltage
Gate-Source Voltage
VDS
â12
VGS
"8
Continuous Drain Current (TJ = 150_C)a
Pulsed Drain Current
continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25_C
TA = 70_C
TA = 25_C
TA = 70_C
ID
IDM
IS
PD
TJ, Tstg
â8.9
â6.7
â7.1
â5.4
â30
â1.7
â0.9
2.0
1.1
1.3
0.7
â55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1 â x 1â FR4 Board.
Document Number: 72379
S-32411âRev. B, 24-Nov-03
t v 10 sec
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
46
80
24
Maximum
62.5
110
32
Unit
_C/W
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