SI4916DY Datasheet, PDF (3/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4916DY
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Dynamic^a
Turn-On Delay Time
Rise Time
t_d(on)
t_r
Channel-1
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Turn-Off Delay Time
Fall Time
t_d(off)
t_f
Channel-2
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
Source-Drain Reverse Recovery Time
t_rr
Body Diode Reverse Recovery Charge
Q_rr
Reverse Recovery Fall Time
t_a
Reverse Recovery Rise Time
t_b
I_F = 1.3 A, dI/dt = 100 A/µs
I_F = 2.2 A, dI/dt = 100 µA/µs
I_F = 1.3 A, dI/dt = 100 A/µs
I_F = 2.2 A, dI/dt = 100 µA/µs
I_F = 1.3 A, dI/dt = 100 A/µs
I_F = 2.2 A, dI/dt = 100 µA/µs
I_F = 1.3 A, dI/dt = 100 A/µs
I_F = 2.2 A, dI/dt = 100 µA/µs
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
Min. Typ.^a Max. Unit
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
8
15
9
15
11
18
13
20
21
32
27
40
ns
6
10
9
15
28
40
24
35
17
nC
12
12
11
ns
16
13
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
I_F = 1.0 A
I_F = 1.0 A, T_J = 125 °C
V_R = 30 V
Maximum Reverse Leakage Current I_rm
V_R = 30 V, T_J = 100 °C
V_R = - 30 V, T_J = 125 °C
Junction Capacitance
C_T
V_R = 10 V
Min.
Typ.
Max.
Unit
0.47
0.50
V
0.36
0.42
0.004 0.100
0.7
10
mA
3.0
20
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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