SI4916DY Datasheet, PDF (2/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4916DY
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Channel-1
Typ.
Max.
Maximum Junction-to-Ambient^a
t ≤ 10 s
R_thJA
54
65
Maximum Junction-to-Foot (Drain)
Steady State
R_thJF
32
38
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. Maximum under Steady State conditions is 112 °C/W for Channel 1 and 107 °C/W for Channel 2.
Channel-2
Typ.
Max.
47
60
30
35
Unit
°C/W
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Static
Drain-Source Breakdown Voltage
V_DS
V_GS = 0 V, I_D = 250 µA
V_DS Temperature Coefficient
V_GS(th) Temperature Coefficient
ΔV_DS/T_J
ΔV_GS(th)/T_J
I_D = 250 µA
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = 20 V
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
On-State Drain Current^b
Drain-Source On-State Resistance^b
Forward Transconductance^b
Diode Forward Voltage^b
Dynamic^a
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
I_D(on)
R_DS(on)
g_fs
V_SD
V_DS = 5 V, V_GS = 10 V
V_GS = 10 V, I_D = 10 A
V_GS = 10 V, I_D = 10.5 A
V_GS = 4.5 V, I_D = 8.5 A
V_GS = 4.5 V, I_D = 9.3 A
V_DS = 15 V, I_D = 10 A
V_DS = 15 V, I_D = 10.5 A
I_S = 1.7 A, V_GS = 0 V
I_S = 1 A, V_GS = 0 V
Q_g
Channel-1
V_DS = 15 V, V_GS = 4.5 V, I_D = 10 A
Q_gs
Channel-2
Q_gd
V_DS = 15 V, V_GS = 4.5 V, I_D = - 10.5 A
Gate Resistance
R_g
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Ch-1
Ch-2
Min.
30
30
1.5
1.5
20
20
0.5
0.5
Typ.^a Max.
Unit
24
25
-6
-6
0.0145
0.015
0.019
0.018
30
35
0.75
0.47
3.0
2.7
100
100
1
100
15
2000
0.018
0.018
0.023
0.022
1.1
0.5
V
mV/°C
V
nA
µA
A
Ω
S
V
6.6
10
8.9
14
2.9
nC
3.4
2.3
2.4
1.9
2.9
Ω
2.3
3.5
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Document Number: 74331
S09-0540-Rev. B, 06-Apr-09