SI4916DY Datasheet, PDF (1/13 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4916DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
Channel-1
Channel-2
V_DS (V)
30
R_DS(on) (Ω)
0.018 at V_GS = 10 V
0.023 at V_GS = 4.5 V
0.018 at V_GS = 10 V
0.022 at V_GS = 4.5 V
I_D (A)^{a Q}g ^(Typ.)
10
6.6
8.5
10.5
8.9
9.3
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I_F (A)
2.0
D_{1 1}
D_{1 2}
G_{2 3}
S_{2 4}
SO-8
8 ^G1
7 ^S1^/D2
6 ^S1^/D2
5 ^S1^/D2
Top View
Ordering Information: Si4916DY-T1-E3 (Lead (Pb)-free)
Si4916DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
FEATURES
• Halogen-free According to IEC 61249-2-21
Available
• LITTLE FOOT^® Plus Integrated Schottky
• 100 % R_g Tested
APPLICATIONS
• DC/DC Converters
- Notebook
D₁
G₁
N-Channel 1
MOSFET
G₂
N-Channel 2
MOSFET
S₂
S₁/D₂
Schottky Diode
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Channel-1
Channel-2
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
20
T_C = 25 °C
10
10.5
Continuous Drain Current (T_J = 150 °C)^{a, b}
T_C = 70 °C
T_A = 25 °C
I_D
8
7.5^{a, b, c}
8.3
7.8^{a, b, c}
T_A = 70 °C
6^{a ,b, c}
6.3^{a, b, c}
Pulsed Drain Current (10 µs Pulse Width)
I_DM
40
40
A
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
3
1.7^{a, b, c}
3.2
1.8^{a, b, c}
PulseD Source-Drain Current
I_SM
40
40
Single-Pulse Avalanche Current
Single-Pulse Avalanche Energy
I_AS
15
L = 0.1 mH
E_AS
11.2
mJ
T_C = 25 °C
3.3
3.5
Maximum Power Dissipation^{a, b}
T_C = 70 °C
T_A = 25 °C
P_D
2.1
1.9^{a, b, c}
2.2
2.0^{a, b, c}
W
T_A = 70 °C
1.2^{a, b, c}
1.3^{a, b, c}
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
Document Number: 74331
S09-0540-Rev. B, 06-Apr-09
www.vishay.com
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