SI4876DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si4876DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
0.010
On-Resistance vs. Drain Current
8000
Capacitance
0.008
0.006
0.004
V_GS = 2.5 V
V_GS = 4.5 V
C_iss
6000
4000
0.002
2000
C_oss
0.000
0
10
20
30
40
50
I_D - Drain Current (A)
C_rss
0
0
4
8
12
16
20
V_DS - Drain-to-Source Voltage (V)
Gate Charge
10
V_DS = 10 V
8
I_D = 21 A
On-Resistance vs. Junction Temperature
1.6
V_GS = 4.5 V
1.4
I_D = 21 A
6
1.2
4
1.0
2
0.8
0
0
20 40 60 80 100 120 140
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.020
T_J = 150_C
10
T_J = 25_C
0.015
0.010
0.005
I_D = 21 A
1
0.00
0.2
0.4
0.6
0.8 1.0 1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71312
S-03950—Rev. C, 26-May-03
0.000
0
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
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