SI4876DY Datasheet, PDF (2/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

Si4876DY
Vishay Siliconix
SPECIFICATIONS (T_J = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Static
Gate Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current^a
Drain-Source On-State Resistance^a
Forward Transconductance^a
Diode Forward Voltage^a
Dynamic^b
V_GS(th)
I_GSS
I_DSS
I_D(on)
r_DS(on)
g_fs
V_SD
V_DS = V_GS, I_D = 250 mA
V_DS = 0 V, V_GS = "12 V
V_DS = 16 V, V_GS = 0 V
V_DS = 16 V, V_GS = 0 V, T_J = 85_C
V_DS w 5 V, V_GS = 4.5 V
V_GS = 4.5 V, I_D = 21 A
V_GS = 2.5 V, I_D = 17 A
V_DS = 10 V, I_D = 21 A
I_S = 3 A, V_GS = 0 V
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Source-Drain Reverse Recovery Time
Q_g
Q_gs
Q_gd
R_g
t_d(on)
t_r
t_d(off)
t_f
t_rr
Notes
a. Pulse test; pulse width v 300 ms, duty cycle v 2%.
b. Guaranteed by design, not subject to production testing.
V_DS = 10 V, V_GS = 4.5 V, I_D = 21 A
V_DD = 10 V, R_L = 10 W
I_D ^ 1 A, V_GEN = 10 V, R_G = 6 W
I_F = 3 A, di/dt = 100 A/ms
Min Typ Max Unit
0.6
V
"100
nA
1
mA
20
50
A
0.0037 0.005
W
0.0058 0.0075
17
S
0.8
1.2
V
55
80
13
nC
11
2.0
2.7
4.6
W
40
60
30
45
175
260
ns
70
105
56
85
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
50
V_GS = 5 thru 2.5 V
40
2.0 V
30
20
10
1.5 V
0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
V_DS - Drain-to-Source Voltage (V)
www.vishay.com
2
Transfer Characteristics
50
40
30
20
10
0
0.0
T_C = 125_C
25_C
- 55_C
0.5
1.0
1.5
2.0
2.5
V_GS - Gate-to-Source Voltage (V)
Document Number: 71312
S-03950—Rev. C, 26-May-03