SI4876DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 20-V (D-S) MOSFET

N-Channel 20-V (D-S) MOSFET
Si4876DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.005 @ V_GS = 4.5 V
20
0.0075 @ V_GS = 2.5 V
I_D (A)
21
17
D
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4876DY
Si4876DY-T1 (with Tape and Reel)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Avalanche Current
Single Avalanche Energy
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 85_C
L = 0.1 mH
T_A = 25_C
T_A = 85_C
V_DS
V_GS
I_D
I_DM
I_AS
E_AS
I_S
P_D
T_J, T_stg
20
"12
21
14
15
10
50
42
88
3
1.3
3.6
1.6
1.9
0.8
- 55 to 150
Unit
V
A
mJ
mS
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
t v 10 sec
Steady State
Steady State
Document Number: 71312
S-03950—Rev. C, 26-May-03
Symbol
R_thJA
R_thJF
Typical
29
67
13
Maximum
35
80
16
Unit
_C/W
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