SI4834BDY-T1-E3 Datasheet, PDF (3/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4834BDY
Vishay Siliconix
MOSFET TYPICAL CHARACTERISTICS 25 °C unless otherwise noted
30
30
V_GS = 10 V thru 5 V
4V
25
25
20
20
15
15
10
5
0
0
0.040
3V
2
4
6
8
10
V_DS - Drain-to-Source Voltage (V)
Output Characteristics
0.030
0.020
0.010
V_GS = 4.5 V
V_GS = 10 V
0.000
0
5
10
15
20
25
30
I _D - Drain Current (A)
On-Resistance vs. Drain Current
10
5
0
0
1200
960
T_C = 125 °C
25 °C
- 55 °C
1
2
3
4
5
V_GS - Gate-to-Source Voltage (V)
Transfer Characteristics
C_iss
720
480
240
C_rss
C_oss
0
0
5
10
15
20
25
30
V_DS - Drain-to-Source Voltage (V)
Capacitance
10
V_DS = 15 V
I_D = 7.5 A
8
6
4
2
1.8
V_GS = 10 V
1.6
I_D = 7.5 A
1.4
1.2
1.0
0.8
0
0
3
6
9
12
15
Q_g - Total Gate Charge (nC)
Gate Charge
0.6
- 50 - 25 0
25 50 75 100 125 150
T_J - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
Document Number: 72064
S09-0869-Rev. D, 18-May-09
www.vishay.com
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