SI4834BDY-T1-E3 Datasheet, PDF (1/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4834BDY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
30
0.022 at V_GS = 10 V
0.030 at V_GS = 4.5 V
I_D (A)
7.5
6.5
SCHOTTKY PRODUCT SUMMARY
V_DS (V)
30
V_SD (V)
Diode Forward Voltage
0.50 V at 1.0 A
I_F (A)
2.0
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• PWM Optimized
• 100 % R_g Tested
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Symmetrical Buck-Boost DC/DC Converter
D₁
D₂
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
8 ^D1
7 ^D1
6 ^D2
5 ^D2
Schottky Diode
G₁
G₂
Top View
Ordering Information: Si4834BDY-T1-E3 (Lead (Pb)-free)
Si4834BDY-T1-GE3 (Lead (Pb)-free and Halogen-free)
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
30
V
V_GS
± 20
Continuous Drain Current (T_J = 150 °C)^a
T_A = 25 °C
T_A = 70 °C
I_D
7.5
6.0
5.7
4.6
A
Pulsed Drain Current
I_DM
30
Continuous Source Current (Diode Conduction)^a
I_S
1.7
0.9
Maximum Power Dissipation^a
T_A = 25 °C
T_A = 70 °C
P_D
2.0
1.3
1.1
W
0.7
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t ≤ 10 s
Steady State
Steady State
Symbol
R_thJA
R_thJF
MOSFET
Typ.
Max.
52
62.5
93
110
35
40
Schottky
Typ.
Max.
53
62.5
93
110
35
40
Unit
°C/W
Document Number: 72064
S09-0869-Rev. D, 18-May-09
www.vishay.com
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