SI4834BDY-T1-E3 Datasheet, PDF (2/10 Pages) Vishay Siliconix – Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode

Si4834BDY
Vishay Siliconix
MOSFET SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.^a Max.
Unit
Static
Gate Threshold Voltage
V_GS(th)
V_DS = V_GS, I_D = 250 µA
0.8
3.0
V
Gate-Body Leakage
I_GSS
V_DS = 0 V, V_GS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
I_DSS
V_DS = 30 V, V_GS = 0 V
V_DS = 30 V, V_GS = 0 V, T_J = 85 °C
Ch-1
Ch-2
Ch-1
Ch-2
100
1
µA
2000
15
On-State Drain Current^b
I_D(on)
V_DS = 5 V, V_GS = 10 V
20
A
Drain-Source On-State Resistance^b
R_DS(on)
V_GS = 10 V, I_D = 7.5 A
V_GS = 4.5 V, I_D = 6.5 A
0.017 0.022
Ω
0.024 0.030
Forward Transconductance^b
g_fs
V_DS = 15 V, I_D = 7.5 A
19
S
Diode Forward Voltage^b
Ch-1
V_SD
I_S = 1 A, V_GS = 0 V
Ch-2
0.47
0.5
V
0.75
1.2
Dynamic^a
Total Gate Charge
Q_g
7
11
Gate-Source Charge
Q_gs
V_DS = 15 V, V_GS = 4.5 V, I_D = 7.5 A
2.9
nC
Gate-Drain Charge
Q_gd
2.5
Gate Resistance
R_g
0.5
1.5
2.6
Ω
Turn-On Delay Time
t_d(on)
9
15
Rise Time
Turn-Off Delay Time
Fall Time
t_r
t_d(off)
t_f
V_DD = 15 V, R_L = 15 Ω
I_D ≅ 1 A, V_GEN = 10 V, R_g = 6 Ω
10
17
19
30
ns
9
15
Source-Drain Reverse Recovery Time
t_rr
I_F = 1.7 A, dI/dt = 100 A/µs
Ch-1
Ch-2
32
55
35
55
Notes:
a. Guaranteed by design, not subject to production testing.
b. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
SCHOTTKY SPECIFICATIONS T_J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Forward Voltage Drop
V_F
I_F = 1.0 A
I_F = 1.0 A, T_J = 125 °C
V_R = 30 V
Maximum Reverse Leakage Current I_rm
V_R = 30 V, T_J = 100 °C
V_R = - 30 V, T_J = 125 °C
Junction Capacitance
C_T
V_R = 10 V
Min.
Typ.
Max.
Unit
0.47
0.50
V
0.36
0.42
0.004 0.100
0.7
10
mA
3.0
20
50
pF
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
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Document Number: 72064
S09-0869-Rev. D, 18-May-09