SI4490DY Datasheet, PDF (3/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

Si4490DY
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
0.20
2500
Capacitance
0.15
0.10
0.05
V_GS = 6 V
V_GS = 10 V
0.00
0
8
16
24
32
40
I_D - Drain Current (A)
Gate Charge
20
V_DS = 100 V
I_D = 4.0 A
16
2000
C_iss
1500
1000
500
C_rss
0
0
40
C_oss
80
120
160
200
V_DS - Drain-to-Source Voltage (V)
On-Resistance vs. Junction Temperature
2.5
V_GS = 10 V
I_D = 4.0 A
2.0
12
1.5
8
1.0
4
0.5
0
0
15
30
45
60
Q_g - Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
T_J = 150_C
10
T_J = 25_C
0.0
-50 -25 0
25 50 75 100 125 150
T_J - Junction Temperature (_C)
On-Resistance vs. Gate-to-Source Voltage
0.25
0.20
I_D = 4.0 A
0.15
0.10
0.05
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
V_SD - Source-to-Drain Voltage (V)
Document Number: 71341
S-03951—Rev. B, 26-May-03
0.00
0
2
4
6
8
10
V_GS - Gate-to-Source Voltage (V)
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