SI4490DY Datasheet, PDF (1/4 Pages) Vishay Siliconix – N-Channel 200-V (D-S) MOSFET

N-Channel 200-V (D-S) MOSFET
Si4490DY
Vishay Siliconix
PRODUCT SUMMARY
V_DS (V)
200
r_DS(on) (W)
0.080 @ V_GS = 10 V
0.090 @ V_GS = 6.0 V
I_D (A)
4.0
3.8
S1
S2
S3
G4
SO-8
8D
7D
6D
5D
Top View
Ordering Information: Si4490DY
Si4490DY-T1 (with Tape and Reel)
D
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 150_C)^a
Pulsed Drain Current
Avalanch Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A = 25_C
T_A = 70_C
L = 0.1 mH
T_A = 25_C
T_A = 70_C
V_DS
V_GS
I_D
I_DM
I_AS
I_S
P_D
T_J, T_stg
200
"20
4.0
2.85
3.2
2.3
40
15
2.6
1.3
3.1
1.56
2.0
1.0
-55 to 150
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Foot (Drain)
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
Document Number: 71341
S-03951—Rev. B, 26-May-03
t v 10 sec
Steady State
Steady State
Symbol
R_thJA
R_thJF
Typical
33
65
17
Maximum
40
80
21
Unit
_C/W
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